advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -200v fast switching characteristic r ds(on) 680m rohs compliant & halogen-free i d -8a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.3 /w rthj-a 62.5 /w data and specifications subject to change without notice 96 -55 to 150 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v total power dissipation operating junction temperature range storage temperature range -55 to 150 total power dissipation 3 continuous drain current, v gs @ 10v -5 pulsed drain current 1 -30 + 20 -8 2 halogen-free product AP9120AGH-HF rating -200 maximum thermal resistance, junction-ambient (pcb mount) 3 201107121 1 thermal data parameter g d s g d s to-252(h) the to-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness.
ap9120agh-h f electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -200 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-4a - - 680 m v gs =-4.5v, i d =-2a - - 1000 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-5a - 7.8 - s i dss drain-source leakage current v ds =-160v, v gs =0v - - -25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =-5a - 39 62 nc q gs gate-source charge v ds =-160v - 3.3 - nc q gd gate-drain ("miller") charge v gs =-10v - 14.5 - nc t d(on) turn-on delay time v ds =-100v - 9 - ns t r rise time i d =-5a - 14 - ns t d(off) turn-off delay time r g =10 -70- ns t f fall time v gs =-10v - 40 - ns c iss input capacitance v gs =0v - 1100 1760 pf c oss output capacitance v ds =-25v - 185 - pf c rss reverse transfer capacitance f=1.0mhz - 55 - pf r g gate resistance f=1.0mhz - 3.5 7 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-5a, v gs =0v - - -1.5 v t rr reverse recovery time i s =-5a, v gs =0v, - 170 - ns q rr reverse recovery charge di/dt=-100a/s - 1.45 - uc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in 2 copper pad of fr4 board 2
ap9120agh-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 4 8 12 16 20 24 28 0 10203040 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -7.0v -6.0v -5.0v v g = - 4.0v 0 4 8 12 16 20 0 10203040 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -8.0v -7.0v -6.0v v g = -5.0v 460 480 500 520 540 560 580 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-2a t c =25 0.4 0.9 1.4 1.9 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =- 4 a v g =-10v 0.3 0.7 1.1 1.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 1 10 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c i d =-250ua
ap9120agh-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. case temperature 4 0.1 1 10 100 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms dc t c =25 o c single pulse 0 2 4 6 8 10 12 0 1020304050 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -5a v ds = -160v 0 400 800 1200 1600 2000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on) 0 2 4 6 8 10 02468 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v 0 2 4 6 8 10 25 50 75 100 125 150 t c , case temperature ( o c ) -i d , drain current (a)
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